From Nano to Giga Electronics ––– A General Discussion of ULSIC vs. TFT Technologies
讲座名称：
From Nano to Giga Electronics ––– A General Discussion of ULSIC vs. TFT Technologies
讲座时间：
2009-07-10
讲座人：
郭育
形式：
校区：
兴庆校区
实践学分：
讲座内容：
The sales of IC and TFT LCD products reached near US $300B and $80B, separately, recently. Currently, the state-of-the-art wafer size of IC is 12-inch while that of the TFT mother glass is great than 2 m by 2m. The mass production history of IC is 50 years while that of the large-size TFT array is 20 years. Therefore, both are highly successful industries.
While currently, the most popular IC device is the MOSFET which is operated under the same principle as that of the TFT, their material properties and fabrication processes are similar but different. The uniqueness of the IC technology lies in the high-density, high-speed transistors integrated with multilevel interconnect lines. The uniqueness of the a-Si:H TFT product is its capability of integrating devices on ultra-large size substrates at a low temperature. Recently, there are many new developments in the TFT technology that can broaden applications to beyond pixel driving but without losing the large-area fabrication capability. Furthermore, the new copper interconnect technology has been developed for both TFT and IC products. Therefore, this is a good time to examine these two technologies and to explore their possible future developments. In this talk, the speaker will analyze similarities and differences of these technologies and show examples on how they can learn from each other’s experience and collaborate in developing future products.
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