Band-coupling-induced unusual material properties of Cu-based compounds

主讲人：魏苏淮

报告时间：2024年4月26日（周五）16:30-17:30

报告地点：兴庆校区 仲英楼B253

报告摘要：Among all the metal elements, Cu has the highest fully occupied d orbital states which are close in energy to its usually unoccupied 4s orbital state. Therefore, due to the strong s-d, as well as p-d band coupling in Cu-based compounds, such as Cu chalcogenides, oxides and halides, they often exhibit some unusual physical properties such as unexpected crystal structures and band structures, deep Cu acceptor levels in II-VI semiconductors, fast ionic diffusion, ultralow thermal conductivity, and high-Tc superconductivity. In this talk, I will discuss the electronic origin of these unusual behaviors based on our first-principles theoretical calculations and band-coupling model.

报告人简介：魏苏淮教授现任北京计算科学研究中心讲席教授，国家重点专项首席科学家，国家基金委重大项目负责人，国家基金委基础科学中心骨干成员，美国物理学会会士（APS Fellow），国际材料学会会士（MRS Fellow）。1981年本科毕业于复旦大学并通过CUSPEA项目去美国留学，1985年在美国威廉玛丽学院取得理学博士学位，1985-2015年在美国可再生能源国家实验室(NREL)工作，2015年回国前担任NREL理论研究室主任，国家实验室Fellow。在半导体能带理论、缺陷与合金物理、能源与光电材料设计、计算方法等方面取得了系统的原创性成果。已发表SCI论文570余篇，包括74篇PRL。论文引用大于75000多次，H因子136。