On the Materials Physics Governing Epitaxial Crystal Growths
讲座名称：
On the Materials Physics Governing Epitaxial Crystal Growths
讲座时间：
2016-07-28
讲座人：
谢亚宏
形式：
校区：
兴庆校区
实践学分：
讲座内容：
报告题目：On the Materials Physics Governing Epitaxial Crystal Growths
时间：2016年7月28日(周四)上午10:00
地点：西安交大曲江校区西六楼409报告厅
报告人：谢亚宏教授（美国加州大学洛杉矶分校）
On the Materials Physics Governing Epitaxial Crystal Growths
Professor Ya-Hong Xie
Department of Materials Science & Engineering, The University of California Los Angeles; yhx@ucla.edu
Epitaxial growth of thin films has been an integral part the microelectronics industry and a rich field of materials science. At the core of epitaxy is the intricate interplay between thermodynamics and kinetics of the atoms on surfaces.
In this talk, I will share with you my personal view of the complex relation of energetic versus kinetics through an array of examples. The discussion of the specific examples follows the order of increasing complexity and includes:
homo-epitaxy of Si on Si including doping;
lattice mismatched hetero-epitaxy of SiGe on Si;
polar-nonpolar hetero-epitaxy of InAs on Si;
hetero-epitaxy with extra large lattice mismatch as in GaN on Silicon;
the growths of 3-dimensional crystals on 2-dimensional van der Waals materials (graphene on graphene; GaN on graphene);
The discussions will highlight the importance of a clear sense of energetic and kinetics when dealing with each of these topics. Experimental as well as theoretical studies from our group at UCLA as well as from other groups from all around the world will be described when appropriate.
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