From Molecule to Material and Back:Impacts of the Precursor Structure and Ligand Choice on the Composition and Properties of Thin Films grown by Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD)
讲座名称：
From Molecule to Material and Back:Impacts of the Precursor Structure and Ligand Choice on the Composition and Properties of Thin Films grown by Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD)
讲座时间：
2014-09-10
讲座人：
Jean-Sebastien M. Lehn
形式：
校区：
兴庆校区
实践学分：
讲座内容：
题目：From Molecule to Material and Back – Impacts of the Precursor Structure and Ligand Choice on the Composition and Properties of Thin Films grown by Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD)
主讲人：Dr. Jean-Sébastien M. Lehn
（Harvard University）
美国哈佛大学博士后
主办方：西安交大-香港科大可持续发展学院
日期：2014年9月10日
时间：上午9：00-11：00
地点：主楼A 104
讲座摘要：
Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) techniques are finding more and more applications in a variety of industrial areas. The availability of suitable molecular precursors determines if a specific material can be deposited by CVD/ALD. It is known that the molecular structure of the CVD/ALD precursor impacts the material’s physical properties and composition, as well as its impurities profile.
However, it is not widely recognized how even minor differences in the structure of the precursor can result in materials with totally different physical properties. New precursors can therefore allow the deposition of new materials. The composition of tantalum nitride films obtained from different precursors will be described as an example, and the impact of the precursor’s structure high-lighted. Mechanistic reasons for these differences will be discussed.
New metal hydrazide, amide or amidinate complexes were synthesized and used as CVD/ALD precursors; the development of new synthetic pathways for hydrazine and amidine ligands made possible the synthesis of large amounts of these complexes. The patented metal amidinate complexes are being evaluated for a variety of industrial CVD/ALD processes as they display a suitable reactivity-to-stability ratio.
Finally, a failed synthesis will be described; the careful analysis of which helped elucidate a decomposition mechanism. This information can then be used to design molecular precursor where this decomposition pathway is not possible.
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