Strong Magnetoelectric Coupling inMultiferroic Heterostructures and Low-Power Devices
讲座名称：
Strong Magnetoelectric Coupling inMultiferroic Heterostructures and Low-Power Devices
讲座时间：
2014-06-18
讲座人：
Nian Sun
形式：
校区：
兴庆校区
实践学分：
讲座内容：
应电信学院电子材料所“青年千人”刘明教授邀请，美国东北大学Electrical and Computer Engineering Department的Nian Sun教授将于6月18日对我校进行学术访问并做公开学术报告。
报告题目：Strong Magnetoelectric Coupling in Multiferroic Heterostructures and Low-Power Devices
报告地点：曲江西六楼409会议室
报告时间：6月18日 上午10:00
报告内容：The coexistence of electric polarization and magnetization in multiferroic materials provides great opportunities for realizing magnetoelectric coupling, including electric field control of magnetism, or vice versa, through a strain mediated magnetoelectric interaction effect in layered magnetic/ferroelectric multiferroic heterostructures. Strong magnetoelectric coupling has been the enabling factor for different multiferroic devices, which however has been elusive, particularly at RF/microwave frequencies.In this presentation, I will cover the most recent progress on novel layered microwave multiferroic heterostructures and devices, which exhibit strong magnetoelectric coupling. We will demonstrate strong magnetoelectric coupling in novel microwave multiferroic heterostructures. These multiferroic heterostructures exhibit a giant voltage tunable magnetic field of 3500 Oe, and a high electrostatically tunable ferromagnetic resonance frequency range between 1.75~ 7.57 GHz, a tunable frequency of 5.82 GHz or fmax/fmin=4.3. We will show new magnetoelectric sensors based on nano-electromechanical system (NEMS) magnetoelectric resonators, which operate at an electromechical frequency of 215MHz and show an ultra-high sensitivity of 200~300picoTesla at room temperature in unshielded lab environment. These NEMS magnetoelectric sensors represent the most sensitive nanoscale room-temperature magnetic sensors, which is predicted to be able to reach 1~10pT DC magnetic field sensitivity, and will have great impacts on biomagnetic sensing, navigation, aerospace, surveillance, etc. At the same time, we will demonstrate E-field modulation ofanisotropic magnetoresistance, giant magnetoresistance and exchange bias at room temperature indifferent multiferroic heterostructures, multiferroic voltage tunable bandpass filters, voltage tunable inductors, tunable bandstop filters, tunable phase shifters and spintronics.
相关视频