Study of Electronic Properties of Epitaxial Graphene using Coherent Controlled Photocurrent Injection
讲座名称：
Study of Electronic Properties of Epitaxial Graphene using Coherent Controlled Photocurrent Injection
讲座时间：
2013-05-05
讲座人：
孙栋
形式：
校区：
兴庆校区
实践学分：
讲座内容：
讲座题目：Study of Electronic Properties of Epitaxial Graphene using Coherent Controlled Photocurrent Injection
讲座时间：2013-5-5 （周日）9:30
讲座地点：中1-3113
讲座人：孙栋，北京大学量子材料国际中心研究员
讲座介绍：Via quantum interference between phase controlled 3.2 μm and 1.6 μm 200- fs pulses, ballistic electric currents can be injected into epitaxial graphene. Based on this coherent controlled photocurrent injection, the third order nonlinear tensor in epitaxial graphene is measured by studying coherently controlled photocurrent direction as function of the pump light polarization. The measured tensor element indicates the presence of interlayer electronic coupling in epitaxial graphene. On the other hand, we have studied the electron-temperature dependence of optically injected coherently controlled ballistic currents in epitaxial graphene by near field THz detection in cryostat and optical pre-pulse excitation of background hot carriers.
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