Role of Excited States in Recombination Processes
讲座名称：
Role of Excited States in Recombination Processes
讲座时间：
2018-06-28
讲座人：
Chris G. Van de Walle
形式：
校区：
兴庆校区
实践学分：
讲座内容：
讲座题目：Role of Excited States in Recombination Processes
讲座时间：2018年6月28下午4：:30（本周四下午4:30）
讲座地点：仲英楼B253
讲 座 人：Chris G. Van de Walle
Herbert Kroemer Distinguished Professor of Materials
University of California, Santa Barbara
Member of the National Academy of Engineering, USA
讲座摘要：
Point defects can strongly impact the performance of semiconductor devices; they may act as compensating centers, charge traps, or recombination centers. Defect-assisted recombination, also known as Shockley-Read-Hall recombination, degrades the performance of electronic and optoelectronic devices. Point defects can also be used beneficially, for instance in quantum information science as analogs of the NV center in diamond. I will discuss the theoretical advances that are enabling us to calculate energetics as well as electronic and optical properties with unprecedented accuracy. In addition to radiative recombination, we also study nonradiative processes. Based on simple rules, one expects defect-assisted nonradiative recombination to become less important in wider-gap materials, but a number of examples show a different trend. We have explained this by noting the crucial role of excited states in recombination processes, transition-metal impurities being an important example.
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