日本九州大学Nakano博士讲座

讲座名称: 日本九州大学Nakano博士讲座
讲座时间: 2017-11-06
讲座人: Satoshi Nakano
形式:
校区: 兴庆校区
实践学分:
讲座内容: 应能动学院陈雪江副教授的邀请,日本九州大学应用力学研究所Nakano博士将来访我校并做专题学术报告,届时欢迎各位师生参与交流。 讲座名称:1. Numerical analysis of dislocation density in Si single crystal           2. Numerical investigation of impurity concentration in multi-crystalline Si for solar cells 讲座时间:2017年11月6日上午8:30 讲座地点:工程馆二楼 陕鼓讲习室 讲座内容: Multi-crystalline silicon is an important material for solar cells because of its cost-effectiveness. However, multi-crystalline cells have a problem for the conversion efficiency of solar cells because many impurities incorporate into a silicon ingot during the solidification process. Dislocation density and residual stress are also serious problems for solar cells because dislocation density causes the reduction of the conversion efficiency of solar cells and residual stress causes the fracture of silicon ingot during the slicing process. It has been reported that dislocation densities rapidly increased during cooling process. Therefore, we have to optimize solidification and cooling process to decrease impurity concentration, dislocation density and residual stress in a silicon ingot. We investigated the behavior of impurity, dislocation and residual stress during the growth process for Si crystal using numerical analysis. And we applied our knowledge which obtain from our numerical results to experiment for Si crystal growth.
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